Characterization of wide-gap semiconductors by photothermal deflection spectroscopy

Abstract III-V nitride semiconductors have been characterized by photothermal deflection spectroscopy (PDS) which can provide the information of non-radiative recombination involving defect levels. After understanding challenges applying PDS to materials emitting light, advantages and features were described for evaluating defects level in band gap. The reciprocal slope spectrum near bandgap energy (Urbach-like energy) increased with increasing indium composition InGaN film. With an increase Urbach-like energy, radial distribution determined x-ray absorption fine structure was likely be decreased. This possibly attributed random aggregation In atoms Also, it proposed that may considered when in-gap emission caused discussed.